CSD16323Q3 N-Channel NexFET™ Power MOSFET | TI.com

CSD16323Q3 (ACTIVE) N-Channel NexFET™ Power MOSFET

 

Description

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
    • Optimized for Control or Synchronous FET Applications

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD16323Q3 Order now 25     Single     5.5     112     6.2     1.1     SON3x3       10     1.1     21     60     Yes     Catalog    
CSD16327Q3 Order now 25     Single     4.8     112     6.2     1.1     SON3x3       10     1.2       60     Yes     Catalog    
CSD16340Q3 Order now 25     Single     5.5     115     6.5     1.2     SON3x3     6.1     10     0.85       60     Yes     Catalog