CSD25310Q2 20-V P-Channel NexFET Power MOSFET, CSD25310Q2 | TI.com

CSD25310Q2 (ACTIVE) 20-V P-Channel NexFET Power MOSFET, CSD25310Q2

 

Description

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.

For all available packages, see the orderable addendum at the end of the data sheet.

Features

  • Ultra-Low Qg and Qgd
  • Low On Resistance
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD25310Q2 Order now -20     -8     Single     23.9     32.5     89     -48     -9.6     3.6     0.5     1.1     -0.85     SON 2x2     Catalog    
CSD25402Q3A Order now -20     -12     Single     8.9     15.9     300     -82     -15     7.5     1.1     2.4     -0.9     SON 3x3     Catalog    
CSD25404Q3 Order now -20     -12     Single     6.5     12.1     150     -240     -18     10.8     2.2     2.8     -0.9     SON 3x3     Catalog