CSD25211W1015 P-Channel NexFET™ Power MOSFET | TI.com

CSD25211W1015 (ACTIVE) P-Channel NexFET™ Power MOSFET

P-Channel NexFET™ Power MOSFET - CSD25211W1015
Datasheet
 

Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Features

  • Ultra-Low On Resistance
  • Ultra-Low Qg and Qgd
  • Small Footprint 1.0 mm × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection – 3 kV
  • RoHS Compliant
  • Halogen Free

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD25211W1015 Order now -20     -6     Single     33     44     -9.5     -3.2     3.4     0.2     1.1     -0.8     WLP 1.0x1.5     Catalog