CSD19537Q3 100V N-Channel NexFET Power MOSFET | TI.com

CSD19537Q3 (ACTIVE)

100V N-Channel NexFET Power MOSFET

100V N-Channel NexFET Power MOSFET - CSD19537Q3
 

Description

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
CSD19537Q3 CSD19531Q5A CSD19532Q5B CSD19533Q5A CSD19534Q5A CSD19538Q2 CSD19538Q3A
100     100     100     100     100     100     100    
  Single     Single     Single     Single     Single     Single    
14.5     6.4     4.9     9.5     15.1     59     61    
219     337     400     231     137     34.4     36    
16     37     48     27     17     4.3     4.3    
2.9     6.6     8.7     4.9     3.2     0.8     0.8    
SON3x3     SON5x6     SON5x6     SON5x6     SON5x6     SON2x2     SON3x3    
20     20     20     20     20     20     20    
3     2.7     2.6     2.8     2.8     3.2     3.2    
53     110     140     75     44     13.1     13.7    
50     100     100     100     40     14.4     15    
No     No     No     No     No     No     No