CSD17575Q3 30-V, N-Channel NexFET™ Power MOSFET | TI.com

CSD17575Q3 (ACTIVE)

30-V, N-Channel NexFET™ Power MOSFET

 

Description

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm
    Plastic Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD17575Q3 Order now 30     Single     3.2     2.3     240     23     5.4     SON3x3     20     1.4     182     60     Yes     Catalog