CSD19532Q5B 100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MOSFET | TI.com

CSD19532Q5B (ACTIVE)

100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MOSFET

100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MOSFET - CSD19532Q5B
 

Description

This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD19532Q5B CSD19531KCS CSD19531Q5A CSD19533KCS CSD19533Q5A CSD19534Q5A CSD19535KCS CSD19536KCS CSD19537Q3
100     100     100     100     100     100     100     100     100    
Single     Single     Single     Single     Single     Single     Single     Single      
4.9     7.7     6.4     10.5     9.5     15.1     3.6     2.7     14.5    
400     285     337     207     231     137     400     400     219    
48     38     37     27     27     17     78     118     16    
8.7     7.5     6.6     5.4     4.9     3.2     13     17     2.9    
SON5x6     TO-220     SON5x6     TO-220     SON5x6     SON5x6     TO-220     TO-220     SON3x3    
20     20     20     20     20     20     20     20     20    
2.6     2.7     2.7     2.8     2.8     2.8     2.7     2.5     3    
140     110     110     86     75     44     187     259     53    
100     100     100     100     100     40     150     150     50    
No     No     No     No     No     No     No     No     No    
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