CSD17309Q3 30V, N ch NexFET MOSFET™, single SON3x3, 6.3mOhm | TI.com

CSD17309Q3
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30V, N ch NexFET MOSFET™, single SON3x3, 6.3mOhm

 

Description

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Features

  • Optimized for 5 V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package
  • APPLICATIONS
    • Notebook Point of Load
    • Point of Load Synchronous Buck in
      Networking, Telecom, and Computing
      Systems

NexFET Is a trademark of Texas Instruments

Parametrics

Compare all products in N-channel MOSFET transistors Email Download to Excel
Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level
CSD17309Q3 Order now 30     Single     6.3     112     7.5     1.7     SON3x3     10     1.2     60     60     Yes    
CSD17301Q5A Order now 30     Single     3     181     19     4.3     SON5x6     10     1.1       100     Yes    
CSD17302Q5A Order now 30     Single     9     104     5.4     1.2     SON5x6     10     1.2     87       Yes    
CSD17303Q5 Order now 30     Single     2.6     200     18     4     SON5x6     10     1.1       100     Yes    
CSD17304Q3 Order now 30     Single     8.8     88     5.1     1.1     SON3x3     10     1.3     60     60     Yes    
CSD17305Q5A Order now 30     Single     3.6     181     14.1     3     SON5x6     10     1.1         Yes    
CSD17306Q5A Order now 30     Single     4.2     155     11.8     2.4     SON5x6     10     1.1         Yes    
CSD17307Q5A Order now