CSD19534Q5A 100V, N-Channel NexFET Power MOSFET | TI.com

CSD19534Q5A (ACTIVE)

100V, N-Channel NexFET Power MOSFET

100V, N-Channel NexFET Power MOSFET - CSD19534Q5A
 

Description

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. Max RθJC = 2.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD19534Q5A CSD19531Q5A CSD19532Q5B CSD19533Q5A CSD19537Q3
100     100     100     100     100    
Single     Single     Single     Single      
15.1     6.4     4.9     9.5     14.5    
137     337     400     231     219    
17     37     48     27     16    
3.2     6.6     8.7     4.9     2.9    
SON5x6     SON5x6     SON5x6     SON5x6     SON3x3    
20     20     20     20     20    
2.8     2.7     2.6     2.8     3    
44     110     140     75     53    
40     100     100     100     50    
No     No     No     No     No    
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