CSD19534Q5A (ACTIVE)

100V, N-Channel NexFET Power MOSFET

100V, N-Channel NexFET Power MOSFET - CSD19534Q5A
Datasheet
 

Description

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. Max RθJC = 2.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
CSD19534Q5A CSD19531Q5A CSD19532Q5B CSD19533Q5A CSD19537Q3
100    100    100    100    100   
Single    Single    Single    Single     
15.1    6.4    4.9    9.5    14.5   
137    337    400    231    219   
17    37    48    27    16   
3.2    6.6    8.7    4.9    2.9   
SON5x6    SON5x6    SON5x6    SON5x6    SON3x3   
20    20    20    20    20   
2.8    2.7    2.6    2.8    3   
44    110    140    75    53   
40    100    100    100    50   
No    No    No    No    No