CSD25202W15 CSD25202W15 20-V P-Channel NexFET™ Power MOSFET | TI.com

CSD25202W15 (ACTIVE) CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

 

Description

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Features

  • Low-Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD25202W15 Order now -20     -6     Single     26     32     52     -38     -4     5.8     0.8     1.1     -0.75     WLP 1.5x1.5     Catalog