CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) | TI.com

CSD13202Q2 (ACTIVE) N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max)

 

Description

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD13202Q2 Order now 12     Single     9.3       76     5.1     0.76     SON2x2     9.1     8     0.8       22     Yes     Catalog    
CSD17313Q2 Order now 30     Single     32       20     2.1     0.4     SON2x2       10     1.3       5     Yes     Catalog    
CSD17318Q2 Order now 30     Single     16.9       68     6     1.3     SON2x2     20     10     0.9     25     22     Yes     Catalog    
CSD17571Q2 Order now 30     Single     29     24     39     2.4     0.6     SON2x2       20     1.6       22     Yes     Catalog