CSD17308Q3 30V, N ch NexFET MOSFET™, single SON3x3, 11.8mOhm | TI.com

CSD17308Q3
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30V, N ch NexFET MOSFET™, single SON3x3, 11.8mOhm

 

Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Features

  • Optimized for 5-V gate drive
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen free
  • VSON 3.3 mm × 3.3 mm plastic package

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level
CSD17308Q3 Order now 30     Single     11.8     78     3.9     0.8     SON3x3     10     1.3     50     50     Yes    
CSD17301Q5A Order now 30     Single     3     181     19     4.3     SON5x6     10     1.1       100     Yes    
CSD17302Q5A Order now 30     Single     9     104     5.4     1.2     SON5x6     10     1.2     87       Yes    
CSD17303Q5 Order now 30     Single     2.6     200     18     4     SON5x6     10     1.1       100     Yes    
CSD17304Q3 Order now 30     Single     8.8     88     5.1     1.1     SON3x3     10     1.3     60     60     Yes    
CSD17305Q5A Order now 30     Single     3.6     181     14.1     3     SON5x6     10     1.1         Yes    
CSD17306Q5A Order now 30     Single     4.2     155     11.8     2.4     SON5x6     10     1.1         Yes    
CSD17307Q5A