CSD23202W10 CSD23202W10 12 V P-Channel NexFET™ Power MOSFET | TI.com

CSD23202W10 (ACTIVE) CSD23202W10 12 V P-Channel NexFET™ Power MOSFET

CSD23202W10 12 V P-Channel NexFET™ Power MOSFET - CSD23202W10
Datasheet
 

Description

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

Features

  • Ultra-Low Qg and Qgd
  • Small Footprint 1 mm × 1 mm
  • Low Profile 0.62-mm Height
  • Pb Free
  • Gate ESD Protection – 3 kV
  • RoHS Compliant
  • Halogen Free

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD23202W10 Order now -12     -6     Single     53     66     92     -25     -2.2     2.9     0.28     0.55     -0.6     WLP 1.0x1.0     Catalog