CSD16411Q3 N-Channel NexFET™ Power MOSFET | TI.com

CSD16411Q3 (ACTIVE) N-Channel NexFET™ Power MOSFET

 

Description

This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD16411Q3 Order now 25     Single     15     10     138     2.9     0.7     SON3x3     16     2     56     60     Yes     Catalog