CSD88537ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND | TI.com

CSD88537ND (ACTIVE) 60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND

 

Description

This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.

Features

  • Ultra-Low Qg and Qgd
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD88537ND Order now 60     Dual     15     62     14     2.3     SO-8     20     3     16       No     Catalog    
CSD88539ND Order now 60     Dual     28     46     14     2.3     SO-8     20     3     11.7     15     No     Catalog