CSD87313DMS (ACTIVE)

30-V Dual N-Channel NexFET™ Power MOSFETs

 

Description

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

Features

  • Low-Source-to-Source On Resistance
  • Dual Common Drain N-Channel MOSFETs
  • Optimized for 5-V Gate Drive
  • Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD87313DMS CSD83325L CSD85302L CSD87501L
30    12    20    30   
Dual Common Drain    Dual    Dual Common Drain    Dual Common Drain   
5.5    5.9    24    5.5   
      3.9   
  52    37    72   
28    8.4    6    15   
6    1.9    1.4    6   
SON3x3    LGA    LGA 1.35x1.35    LGA   
6.6    8.4    29     
4.6    4.9    20    4.6   
10    10    10    20   
0.9    0.95    0.9    1.8