CSD25501F3 (ACTIVE)

–20-V P-Channel FemtoFET™ MOSFET

 

Description

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 0.7 mm × 0.6 mm
  • Low Profile
    • 0.22-mm Max Height
  • Integrated ESD Protection Diode
  • Lead and Halogen Free
  • RoHS Compliant

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Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
High-Side PMOS
CSD25501F3 CSD25213W10 CSD25480F3
-20    -20    -20   
-20    -6    -12   
Single    Single    Single   
76    47    159   
125    67    260   
260      840   
-13.6    -16    -10.4   
-3.6    -1.6    -1.7   
1.02    2.2    0.7   
0.09    0.14    0.1   
0.45    0.74    0.26   
-0.75    -0.85    -0.95   
LGA 0.6x0.7    WLP 1.0x1.0    LGA 0.6x0.7   
YES   YES   YES