This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.
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|Rds(on) Max at VGS=4.5V (mOhms)|
|Rds(on) Max at VGS=2.5V (mOhms)|
|Rds(on) Max at VGS=1.8V (mOhms)|
|Id Peak (Max) (A)|
|Id Max Cont (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|QGS Typ (nC)|
|VGSTH Typ (V)|