This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.
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|Rds(on) Max at VGS=4.5V (mOhms)|
|Rds(on) Max at VGS=2.5V (mOhms)|
|Rds(on) Max at VGS=1.8V (mOhms)|
|Id Peak (Max) (A)|
|Id Max Cont (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|QGS Typ (nC)|
|VGSTH Typ (V)|