CSD25501F3 (ACTIVE)

–20-V P-Channel FemtoFET™ MOSFET

 

Description

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 0.7 mm × 0.6 mm
  • Low Profile
    • 0.22-mm Max Height
  • Integrated ESD Protection Diode
  • Lead and Halogen Free
  • RoHS Compliant

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Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
CSD25501F3 CSD23280F3 CSD23382F4 CSD25213W10 CSD25480F3
-20    -12    -12    -20    -20   
-20    -6    -8    -6    -12   
Single    Single    Single    Single    Single   
76    116    76    47    159   
125    165    105    67    260   
260    250    199      840   
-13.6    -11.4    -22    -16    -10.4   
-3.6    -1.8    -3.5    -1.6    -1.7   
1.02    0.95    1.04    2.2    0.7   
0.09    0.068    0.15    0.14    0.1   
0.45    0.3    0.5    0.74    0.26   
-0.75    -0.65    -0.8    -0.85    -0.95   
LGA 0.6x0.7    LGA 0.6x0.7    LGA 0.6x1.0    WLP 1.0x1.0    LGA 0.6x0.7