CSD25501F3 –20-V P-Channel FemtoFET™ MOSFET | TI.com

CSD25501F3 (ACTIVE)

–20-V P-Channel FemtoFET™ MOSFET

 

Description

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 0.7 mm × 0.6 mm
  • Low Profile
    • 0.22-mm Max Height
  • Integrated ESD Protection Diode
  • Lead and Halogen Free
  • RoHS Compliant

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Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
Rating
CSD25501F3 CSD23280F3 CSD23382F4 CSD25213W10 CSD25480F3
-20     -12     -12     -20     -20    
-20     -6     -8     -6     -12    
Single     Single     Single     Single     Single    
76     116     76     47     159    
125     165     105     67     260    
260     250     199       840    
-13.6     -11.4     -22     -16     -10.4    
-3.6     -1.8     -3.5     -1.6     -1.7    
1.02     0.95     1.04     2.2     0.7    
0.09     0.068     0.15     0.14     0.1    
0.45     0.3     0.5     0.74     0.26    
-0.75     -0.65     -0.8     -0.85     -0.95    
LGA 0.6x0.7     LGA 0.6x0.7     LGA 0.6x1.0     WLP 1.0x1.0     LGA 0.6x0.7    
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