CSD83325L CSD83325L, Dual N-Channel NexFET™ Power MOSFETs | TI.com

CSD83325L (ACTIVE)

CSD83325L, Dual N-Channel NexFET™ Power MOSFETs

CSD83325L, Dual N-Channel NexFET™ Power MOSFETs   - CSD83325L
 

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Features

  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
Logic Level
CSD83325L CSD85302L CSD87313DMS CSD87501L
12     20     30     30    
Dual     Dual Common Drain     Dual Common Drain     Dual Common Drain    
5.9     24     5.5     5.5    
      3.9    
52     37       72    
8.4     6     28     15    
1.9     1.4     6     6    
LGA     LGA 1.35x1.35     SON3x3     LGA    
8.4     29     6.6      
10     10     10     20    
0.95     0.9     0.9     1.8    
Yes     Yes     Yes     Yes