This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.
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|Rds(on) Max at VGS=4.5V (mOhms)|
|Rds(on) Max at VGS=10V (mOhms)|
|IDM, Max Pulsed Drain Current (Max) (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|RDS(on) Typ at VGS=2.5V (Typ) (mOhm)|
|VGSTH Typ (V)|