20 V Dual N-Channel NexFET Power MOSFET - CSD85302L

CSD85302L (ACTIVE)

20 V Dual N-Channel NexFET Power MOSFET

 

Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

Features

  • Common Drain Configuration
  • Low On-Resistance
  • Small Footprint of 1.35 mm × 1.35 mm
  • Pb Free and Halogen Free
  • RoHS Compliant
  • ESD HBM Protection >2.5 kV

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD85302L CSD83325L CSD87313DMS CSD87501L
20    12    30    30   
Dual Common Drain    Dual    Dual Common Drain    Dual Common Drain   
24    5.9    5.5    5.5   
      3.9   
37    52      72   
6    8.4    28    15   
1.4    1.9    6    6   
LGA 1.35x1.35    LGA    SON3x3    LGA   
29    8.4    6.6     
20    4.9    4.6    4.6   
10    10    10    20   
0.9    0.95    0.9    1.8