CSD85302L 20 V Dual N-Channel NexFET Power MOSFET | TI.com

CSD85302L (ACTIVE)

20 V Dual N-Channel NexFET Power MOSFET

20 V Dual N-Channel NexFET Power MOSFET - CSD85302L
 

Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

Features

  • Common Drain Configuration
  • Low On-Resistance
  • Small Footprint of 1.35 mm × 1.35 mm
  • Pb Free and Halogen Free
  • RoHS Compliant
  • ESD HBM Protection >2.5 kV

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
Logic Level
Rating
CSD85302L CSD83325L CSD87313DMS CSD87501L
20     12     30     30    
Dual Common Drain     Dual     Dual Common Drain     Dual Common Drain    
24     5.9     5.5     5.5    
      3.9    
37     52       72    
6     8.4     28     15    
1.4     1.9     6     6    
LGA 1.35x1.35     LGA     SON3x3     LGA    
29     8.4     6.6      
10     10     10     20    
0.9     0.95     0.9     1.8    
Yes     Yes     Yes     Yes    
Catalog     Catalog     Catalog     Catalog