CSD87503Q3E 30-V Dual N-Channel MOSFET, Common Source | TI.com

CSD87503Q3E (ACTIVE)

30-V Dual N-Channel MOSFET, Common Source

 

Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.

Features

  • Dual N-Ch Common Source MOSFETs
  • Optimized for 5-V Gate Drive
  • Low-Thermal Resistance
  • Low Qg and Qgd
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, package limited (A)
Logic Level
Rating
CSD87503Q3E
30    
Dual Common Source    
21.9    
16.9    
89    
13.4    
5.8    
SON3x3    
20    
1.7    
10    
Yes    
Catalog    

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