8-V P-Channel NexFET™ Power MOSFET - CSD22206W

CSD22206W (ACTIVE)

8-V P-Channel NexFET™ Power MOSFET

 

Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Features

  • Ultra-Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Lead Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

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Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
High-Side PMOS
CSD22206W CSD22202W15 CSD22204W CSD22205L
-8    -8    -8    -8   
-6    -6    -6    -6   
Single    Single    Single    Single   
5.7    12.2    9.9    9.9   
9.1    17.4    14    15   
      40   
-108    -48    -80    -71   
-5    -5    -5    -7.4   
11.2    6.5    18.9    6.5   
1.8    1    4.2    1.0   
2.1    1.6    3.2    1.2   
-0.7    -0.8    -0.7    -0.7   
WLP 1.5x1.5    WLP 1.5x1.5    WLP 1.5x1.5    LGA 1.2x1.2   
YES   YES   YES   YES  

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