CSD22206W 8-V P-Channel NexFET™ Power MOSFET | TI.com

CSD22206W (ACTIVE)

8-V P-Channel NexFET™ Power MOSFET

8-V P-Channel NexFET™ Power MOSFET - CSD22206W
Datasheet
 

Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Features

  • Ultra-Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Lead Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

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Parametrics Compare all products in P-channel MOSFET transistors

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
Rating
CSD22206W CSD22202W15 CSD22204W CSD22205L
-8     -8     -8     -8    
-6     -6     -6     -6    
Single     Single     Single     Single    
5.7     12.2     9.9     9.9    
9.1     17.4     14     15    
      40    
-108     -48     -80     -71    
-5     -5     -5     -7.4    
11.2     6.5     18.9     6.5    
1.8     1     4.2     1    
2.1     1.6     3.2     1.2    
-0.7     -0.8     -0.7     -0.7    
WLP 1.5x1.5     WLP 1.5x1.5     WLP 1.5x1.5     LGA 1.2x1.2    
Catalog     Catalog     Catalog     Catalog