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CSD16340Q3

ACTIVE

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

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Data sheet

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CSD17577Q3A ACTIVE 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.4 mOhm This product has similar resistance and a lower price.

CSD16340Q3

ACTIVE
Data sheet Order now

Product details

VDS (V) 25 VGS (V) 10 Type N-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 5.5 VGSTH typ (typ) (V) 0.85 QG (typ) (nC) 6.5 QGD (typ) (nC) 1.2 QGS (typ) (nC) 2.1 ID - silicon limited at TC=25°C (A) 21 ID - package limited (A) 60 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 25 VGS (V) 10 Type N-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 5.5 VGSTH typ (typ) (V) 0.85 QG (typ) (nC) 6.5 QGD (typ) (nC) 1.2 QGS (typ) (nC) 2.1 ID - silicon limited at TC=25°C (A) 21 ID - package limited (A) 60 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VSON-CLIP (DQG) 8 10.89 mm² 3.3 x 3.3
  • Optimized for 5 V Gate Drive
  • Resistance Rated at VGS =2.5 V
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic
    Package
  • APPLICATIONS
    • Point of Load Synchronous
      Buck Converter for Applications
      in Networking, Telecom, and
      Computing Systems
    • Optimized for Control
      or Synchronous FET
      Applications
  • Optimized for 5 V Gate Drive
  • Resistance Rated at VGS =2.5 V
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic
    Package
  • APPLICATIONS
    • Point of Load Synchronous
      Buck Converter for Applications
      in Networking, Telecom, and
      Computing Systems
    • Optimized for Control
      or Synchronous FET
      Applications

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.
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Technical documentation

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Type Title Date
* Data sheet CSD16340Q3 25-V N-Channel NexFET Power MOSFET datasheet (Rev. E) PDF | HTML 04 Sep 2014
Application note MOSFET Support and Training Tools (Rev. D) PDF | HTML 09 Apr 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note QFN and SON PCB Attachment (Rev. C) PDF | HTML 06 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

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