CSD16556Q5B 25V NexFET N Channel Power MosFET | TI.com

CSD16556Q5B (ACTIVE) 25V NexFET N Channel Power MosFET

 

Description

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Features

  • Extremely Low Resistance
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD16556Q5B Order now 25     Single     1.5     1.07     400     37     13     SON5x6     20     1.4     263     100     Yes     Catalog