This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
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|Rds(on) Max at VGS=4.5V (mOhms)|
|Rds(on) Max at VGS=10V (mOhms)|
|IDM, Max Pulsed Drain Current (Max) (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|RDS(on) Typ at VGS=2.5V (Typ) (mOhm)|
|RDS(on) Typ at VGS=4.5V (mOhm)|
|VGSTH Typ (V)|
|ID, Silicon limited at Tc=25degC (A)|
|ID, package limited (A)|