CSD17318Q2 30-V N-Channel NexFET™ Power MOSFET | TI.com

CSD17318Q2 (ACTIVE)

30-V N-Channel NexFET™ Power MOSFET

30-V N-Channel NexFET™ Power MOSFET - CSD17318Q2
 

Description

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Features

  • Optimized for 5-V Gate Drive
  • Low Capacitance and Charge
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD17318Q2 CSD13202Q2 CSD17313Q2 CSD17571Q2
30     12     30     30    
Single     Single     Single     Single    
16.9     9.3     32     29    
      24    
68     76     20     39    
6     5.1     2.1     2.4    
1.3     0.76     0.4     0.6    
SON2x2     SON2x2     SON2x2     SON2x2    
20     9.1        
10     8     10     20    
0.9     0.8     1.3     1.6    
25          
22     22     5     22    
Yes     Yes     Yes     Yes    
Catalog     Catalog     Catalog     Catalog