This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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|Rds(on) max at VGS=4.5 V (mOhms)|
|Rds(on) max at VGS=10 V (mOhms)|
|IDM, max pulsed drain current (Max) (A)|
|QG typ (nC)|
|QGD typ (nC)|
|RDS(on) typ at VGS=2.5 V (Typ) (mOhm)|
|VGSTH typ (V)|
|LGA 1.0 x 0.6mm|