CSD18534Q5A

ACTIVE

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.8 mOhm

Product details

VDS (V) 60 VGS (V) 20 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 9.8 Rds(on) at VGS=4.5 V (max) (mΩ) 12.4 VGSTH typ (typ) (V) 1.9 QG (typ) (nC) 17 QGD (typ) (nC) 3.5 QGS (typ) (nC) 3.2 ID - silicon limited at TC=25°C (A) 69 ID - package limited (A) 50 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 60 VGS (V) 20 Type N-channel Configuration Single Rds(on) at VGS=10 V (max) (mΩ) 9.8 Rds(on) at VGS=4.5 V (max) (mΩ) 12.4 VGSTH typ (typ) (V) 1.9 QG (typ) (nC) 17 QGD (typ) (nC) 3.5 QGS (typ) (nC) 3.2 ID - silicon limited at TC=25°C (A) 69 ID - package limited (A) 50 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VSONP (DQJ) 8 29.4 mm² 4.9 x 6
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 10
Type Title Date
* Data sheet CSD18534Q5A 60 V N-Channel NexFET™ Power MOSFET datasheet (Rev. D) PDF | HTML 16 Jun 2015
Application note MOSFET Support and Training Tools (Rev. E) PDF | HTML 13 May 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note QFN and SON PCB Attachment (Rev. C) PDF | HTML 06 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
EVM User's guide Using the UCC28730EVM-552 10-W Adaptor Module With PSR and Wake-Up Monitor 06 Feb 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

Please view the Design & development section on a desktop.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos