This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| Rds(on) Max at VGS=10V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| RDS(on) Typ at VGS=4.5V (mOhm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| CSD17581Q3A |
|---|
| 30 |
| Single |
| 4.7 |
| 3.8 |
| 154 |
| 20 |
| 4.0 |
| SON3x3 |
| 3.9 |
| 20 |
| 1.3 |
| 101 |
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