This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
VDS (V) |
Configuration |
Rds(on) Max at VGS=4.5V (mOhms) |
Rds(on) Max at VGS=10V (mOhms) |
IDM, Max Pulsed Drain Current (Max) (A) |
QG Typ (nC) |
QGD Typ (nC) |
Package (mm) |
VGS (V) |
VGSTH Typ (V) |
ID, Silicon limited at Tc=25degC (A) |
ID, package limited (A) |
Logic Level |
CSD17581Q3A |
---|
30 |
Single |
4.7 |
3.8 |
154 |
20 |
4 |
SON3x3 |
20 |
1.3 |
101 |
60 |
Yes |
Order Now |