12V, N-Channel FemtoFET™MOSFET - CSD13381F4

CSD13381F4 (ACTIVE)

12V, N-Channel FemtoFET™MOSFET

Applications

  • Laptop
  • Tablet
  • Cell phone
  • Battery charger

Description

The FemtoFET MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Low On Resistance
  • Low Qg and Qgd
  • Low Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Height
  • Integrated ESD Protection Diode
    • Rated > 4 kV HBM
    • Rated > 2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max @ VGS=4.5V (mOhms)
Rds(on) Max @ VGS=10V (mOhms)
ID / IPEAK (Max) (A)
Id Max@TC=25°C (A)
QG Typ (nC)
Configuration
Package
Rating
Approx. Price (US$)
QGD Typ (nC)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD13381F4 CSD17483F4
12     30    
Yes     Yes    
180     260    
  230    
7     5    
7     5    
1.06     1.01    
Single     Single    
LGA 1.0 x 0.6mm     LGA 1.0 x 0.6mm    
Catalog     Catalog    
0.06 | 1ku     0.06 | 1ku    
0.14     0.13    
170     240    
140     200    
8     12    
0.85     0.85    

Related end equipment

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching
    Applications
  • Single-Cell Battery Applications
  • Handheld and Mobile Applications

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