12V, N-Channel FemtoFET™MOSFET - CSD13381F4

CSD13381F4 (ACTIVE)

12V, N-Channel FemtoFET™MOSFET

Applications

  • Laptop
  • Tablet
  • Cell phone
  • Battery charger

Description

This 140 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Low On-Resistance
  • Low Qg and Qgd
  • Low Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
ID, Continuous Drain Current at Ta=25degC (A)
QG Typ (nC)
Configuration
Package
Rating
Approx. Price (US$)
QGD Typ (nC)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD13381F4 CSD17483F4
12     30    
Yes     Yes    
180     260    
  230    
7     5    
2.1     1.5    
1.06     1.01    
Single     Single    
LGA 1.0 x 0.6mm     LGA 1.0 x 0.6mm    
Catalog     Catalog    
0.06 | 1ku     0.06 | 1ku    
0.14     0.13    
170     240    
140     200    
8     12    
0.85     0.85    

Related end equipment

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching
    Applications
  • Single-Cell Battery Applications
  • Handheld and Mobile Applications

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