80V, N-Channel NexFET™ Power MOSFET - CSD19506KCS

CSD19506KCS (ACTIVE)

80V, N-Channel NexFET™ Power MOSFET

Description

This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
ID, Silicon limited at Tc=25degC (A)
ID, Continuous Drain Current at Ta=25degC (A)
QG Typ (nC)
Configuration
Package
Rating
Approx. Price (US$)
QGD Typ (nC)
VGS (V)
VGSTH Typ (V)
CSD19506KCS CSD19501KCS CSD19502Q5B CSD19503KCS CSD19505KCS
80     80     80     80     80    
No     No     No     No     No    
2.3     6.6     4.1     9.2     3.1    
400     305     400     247     400    
273     129     157     94     208    
    17        
120     38     48     28     76    
Single     Single     Single     Single     Single    
TO-220     TO-220     SON5x6     TO-220     TO-220    
Catalog     Catalog     Catalog     Catalog     Catalog    
2.30 | 1ku     1.00 | 1ku     1.19 | 1ku     0.90 | 1ku     1.65 | 1ku    
20     5.8     8.6     5.4     11    
20     20     20     20     20    
2.5     2.6     2.7     2.8     2.6    

Related end equipment

  • Secondary Side Synchronous Rectifier
  • Motor Control

Featured tools and software

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FETs from TI
 
Vin
Min
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V
  Iout
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Vin (V)
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Op. Temperature °C
 
Optional Light Output (Lumens)
 
 
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