The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
NexFET is a trademark of Texas Instruments.
|Rds(on) max at VGS=4.5 V (mOhms)|
|IDM, max pulsed drain current (Max) (A)|
|QG typ (nC)|
|QGD typ (nC)|
|VGSTH typ (V)|
|ID, silicon limited at Tc=25degC (A)|
|ID, package limited (A)|