CSD16322Q5 N-Channel NexFET™ Power MOSFETs | TI.com

CSD16322Q5 (ACTIVE)

N-Channel NexFET™ Power MOSFETs

N-Channel NexFET™ Power MOSFETs - CSD16322Q5
Datasheet
 

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Features

  • Optimized for 5V Gate Drive
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck in Networking,
      Telecom and Computing Systems
    • Synchronous or Control FET Applications

NexFET is a trademark of Texas Instruments.

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD16322Q5 CSD16321Q5 CSD16325Q5
25     25     25    
Single     Single     Single    
5.8     2.6     2.2    
136     200     200    
6.8     14     18    
1.3     2.5     3.5    
SON5x6     SON5x6     SON5x6    
10     10     10    
1.1     1.1     1.1    
97        
100     100     100    
Yes     Yes     Yes    
Catalog     Catalog     Catalog