The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
NexFET is a trademark of Texas Instruments.
|Rds(on) Max at VGS=4.5V (mOhms)|
|IDM, Max Pulsed Drain Current (Max) (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|VGSTH Typ (V)|
|ID, Silicon limited at Tc=25degC (A)|
|ID, package limited (A)|