CSD16323Q3 N-Channel NexFET™ Power MOSFET | TI.com

CSD16323Q3 (ACTIVE)

N-Channel NexFET™ Power MOSFET

N-Channel NexFET™ Power MOSFET - CSD16323Q3
 

Description

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
    • Optimized for Control or Synchronous FET Applications

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
CSD16323Q3 CSD16327Q3 CSD16340Q3
25     25     25    
Single     Single     Single    
5.5     4.8     5.5    
112     112     115    
6.2     6.2     6.5    
1.1     1.1     1.2    
SON3x3     SON3x3     SON3x3    
    6.1    
10     10     10    
1.1     1.2     0.85    
21        
60     60     60    
Yes     Yes     Yes