Number of channels
2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
2.2
Vos (offset voltage at 25°C) (max) (mV)
0.025
Offset drift (typ) (µV/°C)
0.32
Input bias current (max) (pA)
10
GBW (typ) (MHz)
5.5
Features
EMI Hardened, Small Size, e-Trim™
Slew rate (typ) (V/µs)
2
Rail-to-rail
In, Out
Iq per channel (typ) (mA)
0.76
Vn at 1 kHz (typ) (nV√Hz)
7.5
CMRR (typ) (dB)
90
Rating
Catalog
Operating temperature range (°C)
-40 to 125
Iout (typ) (A)
0.03
Architecture
CMOS
Input common mode headroom (to negative supply) (typ) (V)
-0.1
Input common mode headroom (to positive supply) (typ) (V)
0.1
Output swing headroom (to negative supply) (typ) (V)
0.01
Output swing headroom (to positive supply) (typ) (V)
-0.01
THD + N at 1 kHz (typ) (%)
0.00027
Number of channels
2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
2.2
Vos (offset voltage at 25°C) (max) (mV)
0.025
Offset drift (typ) (µV/°C)
0.32
Input bias current (max) (pA)
10
GBW (typ) (MHz)
5.5
Features
EMI Hardened, Small Size, e-Trim™
Slew rate (typ) (V/µs)
2
Rail-to-rail
In, Out
Iq per channel (typ) (mA)
0.76
Vn at 1 kHz (typ) (nV√Hz)
7.5
CMRR (typ) (dB)
90
Rating
Catalog
Operating temperature range (°C)
-40 to 125
Iout (typ) (A)
0.03
Architecture
CMOS
Input common mode headroom (to negative supply) (typ) (V)
-0.1
Input common mode headroom (to positive supply) (typ) (V)
0.1
Output swing headroom (to negative supply) (typ) (V)
0.01
Output swing headroom (to positive supply) (typ) (V)
-0.01
THD + N at 1 kHz (typ) (%)
0.00027