INA950-SEP

現行

Radiation-tolerant, 2.7V to 80V, 1.1MHz, ultra-precise, current-sense amplifier

產品詳細資料

Product type Analog output Common-mode voltage (max) (V) 80 Common-mode voltage (min) (V) 2.7 Input offset (±) (max) (µV) 25 Input offset drift (±) (typ) (µV/°C) 0.05 Features High frequency, Ultra precise Rating Space Voltage gain (V/V) 20 CMRR (min) (dB) 140 Bandwidth (kHz) 1100 Iq (max) (mA) 0.37 Number of channels 1 Comparators (#) 0 Gain error (%) 0.1 Gain error drift (±) (max) (ppm/°C) 5 Slew rate (V/µs) 2 Operating temperature range (°C) -55 to 125
Product type Analog output Common-mode voltage (max) (V) 80 Common-mode voltage (min) (V) 2.7 Input offset (±) (max) (µV) 25 Input offset drift (±) (typ) (µV/°C) 0.05 Features High frequency, Ultra precise Rating Space Voltage gain (V/V) 20 CMRR (min) (dB) 140 Bandwidth (kHz) 1100 Iq (max) (mA) 0.37 Number of channels 1 Comparators (#) 0 Gain error (%) 0.1 Gain error drift (±) (max) (ppm/°C) 5 Slew rate (V/µs) 2 Operating temperature range (°C) -55 to 125
TSSOP (PW) 8 19.2 mm² (3 mm × 6.4 mm)
  • VID V62/25635
  • Radiation - Total Ionizing Dose (TID):
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 43MeV-cm2 /mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
  • Space Enhanced Plastic
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Outgassing test performed per ASTM E595
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Wide common-mode voltage:
    • Operational voltage: 2.7V to 80V
    • Survival voltage: −20V to 85V
  • Excellent CMRR:
    • 160dB DC
    • 85dB AC at 50kHz
  • Gain of 20V/V
    • Gain error: ±0.1% (maximum)
    • Gain drift: ±1.5ppm/°C
  • Offset voltage: ±12µV (maximum)
  • Offset drift: ±0.05µV/°C
  • High bandwidth: 1.1MHz
  • Slew rate: 2V/µs
  • Quiescent current: 370µA
  • VID V62/25635
  • Radiation - Total Ionizing Dose (TID):
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 43MeV-cm2 /mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
  • Space Enhanced Plastic
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Outgassing test performed per ASTM E595
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Wide common-mode voltage:
    • Operational voltage: 2.7V to 80V
    • Survival voltage: −20V to 85V
  • Excellent CMRR:
    • 160dB DC
    • 85dB AC at 50kHz
  • Gain of 20V/V
    • Gain error: ±0.1% (maximum)
    • Gain drift: ±1.5ppm/°C
  • Offset voltage: ±12µV (maximum)
  • Offset drift: ±0.05µV/°C
  • High bandwidth: 1.1MHz
  • Slew rate: 2V/µs
  • Quiescent current: 370µA

The INA950-SEP is an ultra-precise, current-sense amplifier that can measure voltage drops across shunt resistors over a wide common-mode range from 2.7V to 80V. The ultra-precise current measurement accuracy is achieved thanks to the combination of an ultra-low offset voltage of ±12µV (maximum), a small gain error of ±0.1% (maximum), and a high DC CMRR of 160dB (typical). The INA950-SEP is not only designed for DC current measurement, but also for high-speed applications (such as fast overcurrent protection, for example) with a high bandwidth of 1.1MHz and an 85dB AC CMRR (at 50kHz).

The INA950-SEP provides the capability to make ultra-precise current measurements by sensing the voltage drop across a shunt resistor over a wide common- mode range from 2.7V to 80V. The INA950-SEP is available in the TSSOP-8 package.

The INA950-SEP operates from a single 2.7V to 5.5V supply while only drawing 370µA from the supply (typical). The low offset of the zero-drift architecture enables current sensing with low ohmic shunts as specified over the operating temperature range (−55°C to 125°C).

The INA950-SEP is an ultra-precise, current-sense amplifier that can measure voltage drops across shunt resistors over a wide common-mode range from 2.7V to 80V. The ultra-precise current measurement accuracy is achieved thanks to the combination of an ultra-low offset voltage of ±12µV (maximum), a small gain error of ±0.1% (maximum), and a high DC CMRR of 160dB (typical). The INA950-SEP is not only designed for DC current measurement, but also for high-speed applications (such as fast overcurrent protection, for example) with a high bandwidth of 1.1MHz and an 85dB AC CMRR (at 50kHz).

The INA950-SEP provides the capability to make ultra-precise current measurements by sensing the voltage drop across a shunt resistor over a wide common- mode range from 2.7V to 80V. The INA950-SEP is available in the TSSOP-8 package.

The INA950-SEP operates from a single 2.7V to 5.5V supply while only drawing 370µA from the supply (typical). The low offset of the zero-drift architecture enables current sensing with low ohmic shunts as specified over the operating temperature range (−55°C to 125°C).

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 INA950-SEP 2.7V to 80V, 1.1MHz, Ultra-Precise, Current-Sense Amplifier datasheet PDF | HTML 2025/3/11
* 輻射及可靠性報告 INA950-SEP Single-Event Effects (SEE) Radiation Test Report (Rev. C) PDF | HTML 2026/6/1
* 輻射及可靠性報告 INA950-SEP Total Ionizing Dose (TID) Report (Rev. A) 2025/3/14
* 輻射及可靠性報告 INA950-SEP Production Flow and Reliability Report PDF | HTML 2025/2/27
選擇指南 TI Space Products (Rev. L) 2026/3/27
Application brief Precision High-Voltage Current Sensing Using Zener-Shifted Floating Ground and Isolated Digital Interface PDF | HTML 2025/12/10

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模擬型號

INA950-SEP PSpice Model Reference

SBOMCN0.ZIP (1160 KB) - PSpice 模型
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模擬型號

INA950-SEP Spice Model

SWCM009.ZIP (59 KB) - TISpice 模型
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除了作為獨立工具使用外,此計算機還與類比工程師口袋參考中描述的概念相得益彰。

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